We live in the “Information Age”, which corresponds to the time that large amounts of information are widely available to many people. This fundamental change in our societies is intimately linked to the development of computer technologies. From the first transistors developed in 1947 by John Bardeen, Walter Brattain and William Shockley in the Bell Labs to the latest generation of smartphones, more than 75 years of microelectronic changed our vision of the world. If the “Moore’s law” has driven the industry for more than 50 years, silicon chips are reaching their fundamental physical limits. Ongoing research efforts on new material integration into silicon chips may result in one or two generations of smaller transistors using high-dielectrics, high mobility materials or new architectures, but further improvements in performance require a fundamentally different approach. In this presentation, I will discuss three different approaches, that I developed during my career: the first section deals with the integration of III-V nanowires on silicon for nanoelectronics applications, the second one is focused on the development of high mobility III-V nanostructures and hybrid interfaces for quantum computing, and the third one deals with the development of novel topological materials for applications in quantum computing and spintronics. Finally, I will present some perspectives about these new material interfaces and their integration into future devices.